Major Equipment:

Transmission electron microscopes:

FEI Tecnai G2 F30 FEG high resolution and analitical microscope (coming)

FEI Tecnai G2 Sphera Microscope for Life Science Studies (in installation)

JEOL 2010 high resolution microscope

Scanning electron microscopes:

JEOL 6300F analytical microscope

JEOL 6340F field emission gun microscope

FEI XL40 Sirion FEG microscope

Scanning probe microscopes (STM/AFM):

Digital Instruments Multi-mode Nanoscope (2)

Digital Instruments Dimension 3000 microscope

Digital Instruments Dimension 3100 microscope

Secondary Ion Mass Spectrometry System:

Physical Electronics 6650 Quadrupole

X-ray Photoelectron Spectroscopy System:

Kratos Axis Ultra

Focused Ion Beam System:

FEI Focused Ion Beam (Model DB235 Dual Beam)

Instruments for Sample preparation:

Gatan precision ion polishing system (Model 691)

Fischione ion polishing system (Model 1010)

Allied MultiPrep polishing machine (Model 15-1000)

Gatan dimple grinder (Model 650)

VCR Dimpler (Model D500)

Computer system:

PentiumIV-1.6GHz,SuperMac-220MHz for TEM simulation

PentiumIII-500MHz for SPM image processing

Epson 1600dpi optical scanner for film/image digitization

Electron microscopy simulation:

Software for Scanning Electron Microscopy (SEM)

Software for Transmission Electron Microscopy (TEM)

Recharge Rates:

Equipment:

$60 per hour for TEMs (2010&Sphera) ($87.6 off campus)

$80 per hour for TEM (F30) ($116.8 off campus)

$50 per hour for SEMs ($73 off campus)

$20 per hour for SPMs (AFMs) ($29.2 off campus)

$50.06 per hour for SIMS and ($73.09 off campus)

$30.27 per hour for XPS ($44.19 off campus)

$100 per hour for FIB ($146 off campus)

Development Engineer:

$47.08 per hour ($68.74 off campus): Dr. Tom Mates

$45.46 per hour ($66.38 off campus): Dr. Jin-Ping Zhang

$39.79 per hour ($58.10 off campus): Mark Cornish

Training:

TEM classes are available (no fee for UCSB users) - please contact Dr. Jin-Ping Zhang

Electron Microscopy

The electron microscope uses a focused beam energized up to10⁶eV to provide magnified images and chemical information with very high spatial resolution. Since the short wavelength of electron beam and the successful development of low aberration electron optical lenses, the atomic resolution is routinely achievable for transmission electron microscope (TEM), as well as the resolution close to 1 nanometer for scanning electron microscope (SEM). The SEMs apply secondary and back scattered electrons to imaging the surface area, called SEI and BEI, while the TEMs mainly use the transmitted signals of a thin specimen. With a scanning device attached, a TEM can perform both transmission and scanning microscopy. Electron diffraction patterns can be obtained from TEM simultaneously as well as electron channeling patterns for SEM. Chemical analysis with a finely focused beam is another advantage of electron microscopy, such electron dispersive X-ray (EDX) analysis and electron energy loss spectroscopy (EELS). The newly developed high coherent source, field emission gun of single crystal tungsten, has made high-resolution imaging and microanalysis with a beam size less than 1nm for TEM and close to 1nm for SEM possible. Now the power of electron microscopy has been widely used in almost every field of materials research, since it can provide both surface and microstructural information and the microscopes are getting more computerized.

FEI Tecnai G2 Sphera Microscope for Life Science Studies This microscope is designed for 200kV and lower operation voltages, suitable for studies of biological, organic and other beam sensitive materials. For that purpose, this microscope is equipped with a CCD camera (Gatan Ultrascan 1000 2Kx2K) and a cryo-station for specimen preparation and transfer within liquid nitrogen. With a LaB6 emitter, the resolution is 0.27 nm at 200kV. Features: (1) High tilt and large field of view; (2) CompuStage with Smart-Tilt software; (3)Low-dose exposure. Specimen holders: (1) Single tilt holder ±70°; (2) Double tilt holder (x ±70°, y ±30°).; (2) Gatan cryo-transfer holder.

FEI Tecnai G2 F30 FEG Microscope With a field emission gun (FEG) and an U-TWIN lens, this microscope is designed for both high resolution and analytical microscopy. The attachments of this microscope are: (1) A scanning unit with a bright field (BF) /dark field (DF) detector and a high-angle annular dark-field (HAADF) detector for scanning TEM; (2) Gatan Enfina 1000 system for electron energy-loss spectroscopy (EELS) and Z-contrast imaging; (3) Electron despersive X-ray analysis system (EDXA) for chemical information; (4) Gatan wide-angle CCD (2kx2k). Specimen holder: Double tilt holder (x ±22°, y ±15°).

JEOL2010 Analytical Microscope + Slow Scan CCD Camera + Energy Loss Spectrometer + Gatan Imaging Filter + Energy Dispersive X-ray Spectrometer The JEOL2010HR microscope is an analytical microscope equipped with a energy dispersive x-ray system (EDXA) by Oxford and a electron energy loss spectroscopy (EELS) system by Gatan (a Mac-based GIF System). A slow scan CCD camera is attached with the GIF, that allows low-dose as well as the zero-loss imaging (near-elastic scattering imaging method) to be performed. The resolution for analytical use is about 131 eV and 1.2 eV for EDXA and EELS respectively, while the point-to-point resolution in high resolution mode is about 2.3 Å at 200kV. The elements of B and above can be detected with our Oxford Inca system. Specification: www.jeol.com; www.gatan.com; www.Oxfordxtg.com

JEOL6300F Scanning Microscope. The JEOL6300F scanning microscope uses a field emission gun with cold cathode, the highest coherent source available for a commercial microscope. The resolution is 1.5 nm in secondary electron imaging (SEI) and 3.0 nm in backscattered electron imaging (BEI) when the microscope is operated at 30 kV, the highest voltage for this microscope. A multi-purpose specimen chamber has an eucentric goniometer stage of (50 x 70 mm) in X-Y movement, 360° rotation and a maximum tilt angle of 60°. The airlock specimen chamber allows up to 32 mm-in-diameter specimens to exchange, and the size can also be up to 150 mm when the exchange is carried out without the airlock. In addition to a Polaroid camera, a computer station is attached for image on-line processing. Auto functions in focusing, astigmatism correction, and brightness-contrast adjustment are available. New attachments: (1) Oxford Inca x-ray system; (2) Oxford CL2 cathodoluminescence system. Specification: www.jeol.com

JEOL6340 FEG Digital Scanning Microscope JEOL6340F microscope is equipped with a cold field emission cathode operated at 0.5 to 30 kV. The secondary electron image resolution is 1.2 nm at 15 kV and 2.5 nm at 1 kV that is resulted from an electromagnetic 4-lens system with a semi-in-lens objective lens that is designed for the smallest possible aberrations. Images are displayed with 1280x1024x8 pixels on a PC and the maximum resolution is 2048x2048

FEI XL40 Sirion FEG Digital Scanning Microscope High resolution scanning electron microscope completely controlled under WindowNT. Equipped with a high stability Schottky field emission gun and a large specimen chamber (379x280 mm door size).

Scanning Probe Microscopy

The scanning probe microscope (SPM) operates exactly as its name implies: a sharp tip is scanning on sample surface in a controlled contact or non-contact mode, and the signals carrying surface information are collected, processed and then plotted on a computer screen. The first base of SPM was scanning tunneling microscope (STM) that was invented 1982. After that, it has also been found not only the tunneling current, but also the atomic force and other kinds of interactions in between tip and sample surface can be probed. Therefore, the category of SPM samples is greatly extended from conducting to non-conducting or soft materials since the tip can work just in a near-surface scan. The name of scanning probe microscopy summarizes scanning tunneling microscopy, atomic force microscopy (AFM), scanning capacitance microscopy (SCM), magnetic force microscopy (MFM) as well as a range of other measuring techniques.

di-Multi-Mode NanoScope

This microscope can be performed at both tapping and contact mode with highest resolution manufactured. With either the D-type (10x10x25µm) or the J-type scanner (125x125x5µm), images on both atomic and macroscopic scales can easily be obtained. The microscope performs the full range of SPM techniques to measure surface characteristics such as surface topography, elasticity, friction, adhesion, magnetic fields, and electrical fields. Surfaces of a wide range of materials, including conducting and non-conducting samples, can be examined with this microscope. The 2.5Å monolayer of GaN semiconductors can be easily resolved, as shown in the representative images. Attachments: optical viewing sytem, heating stage, signal access module, and vibration isolation tripod. Specification: www.di.com

di-Multi-Mode NanoScope

The microscope is attached with a heater system that enables the measurements at elevated temperatures up to 250° C in a controlled environment. The temperature drift is +/- 0.025° C. Other attachments: (1) Nanoscope Optical View System (OMV-NTSC); (2) Vibration Isolation tripod. Specification: www.di.com

di-Dimension 3000/3100 Scanning Probe Microscope These SPMs have the similar functions in surface measurements with the Milti-Mode microscope as stated above. The major difference is that this microscope is designed for imaging a 6" wafer. A large specimen stage is provided and the microscope is located in an anti-vibration hood. Inside the microscope, there is an optical system by the scanner to guide the scan with an image of the sample surface shown on the screen. With this optical image, users can search a specific feature as small as 0.1µm to scan. The hardware design of this microscope is compatible with electric force and magnetic force microscopy without any additional attachments. Specification: www.di.com

Physical Electronics 6650 Dynamic SIMS Dynamic SIMS is used for depth profiling solid materials, allowing a determination of elemental composition as a function of depth. The key attributes of SIMS are its unparalleled sensitivity (detection down to ppb levels in some cases) and its high depth resolution (as low as 30 Angstroms). SIMS is not inherently quantitative but can give quantitative results on unknowns if appropriate standards are supplied. In depth profiling mode, up to 12 elements can be monitored as a function of depth in a single scan. And in samples with unknown contaminants, the SIMS can be operated in mass spectrum mode rather than depth profiling mode, to scan a mass range from 0 to 300 a.m.u. Any solid sample can be run, including polymers, metals, ceramics, and semiconductors. A cesium ion gun is used to detect electronegative species and an oxygen ion gun is used to detect electropositive species. Ion images can also be generated, with a lateral resolution down to approximately 8 microns. Specification: www.phi.com

Kratos Axis Ultra XPS system Purchased in 2001, the Kratos Ultra combines fast, high-sensitivity XPS (X-Ray Photoelectron Spectrometry) with a unique "real-time" imaging capability that allows us to quickly produce 2-dimensional chemical-state maps with spatial resolution as fine as 5 microns. The system also provides state-of-the-art charge compensation for non-conductive specimens. Spectra can be taken from areas as small as 15 microns in diameter. In wide-area scans, most elements other than hydrogen and helium can be detected down to approximately 0.1%. XPS offers a quantitative determination the elemental composition of the top 50 to 70 Angstroms of solid specimens. High-resolution scans can then be taken of elemental peaks of interest, and peak shifts can be used to determine chemical bonding information. In addition, specimens can be tilted to provide a shallower analysis, emphasizing the top 15 to 20 Angstroms. The system is also equipped with a cold stage, and an Ar ion gun for cleaning and depth profiling. Three X-ray sources are available: monochromated Al, and non-monochromated Mg and Al. Specification: www.kratos.com

FEI DB235 Dual-Beam Focus Ion Beam System DB235 is small stage system combining a Hexalens electron column and a Magnum ion column for failure analysis and high-end sample preparation. A Schottkey emitter is used for scanning electron microscopy (SEM) under 200 – 300 kV, while Gallium liquid metal is for focus ion beam (FIB) operated at 5 to 30 kV in a current range of 1pA to 20 nA. 3D imaging can be carried out by using these two beams arranged in 52°-tilt angle. The resolution is 3 nm for SEM and 7 nm for FIB. This system is controlled under Window NT system and this machine is oriented for TEM sample preparation. Specification: www.feicompany.com

Electron Microscopy Simulation

Electron simulation software are loaded into a Mac and two PC computers that are open to users.

"Electron Flight Simulation" (Version 3.1) by Small World, Inc. Environmental SEM analysis simulation and modeling software for Windows. More details: www.small-world.net

CrystalKit and MacTempas (Mac)

CrystalKit (version 1.8.3) Provider: Total Resolution Crystallographic modelling of crystals, defects and interface. The program starts from single crystal data through a data-bank of the 230 spacegroups, and accepts up to 2 different crystalstructures for creating interface structures. The final structure generated by CrystalKit can be saved in a MacTempas file or an EMS supercell file for immediate simulation of diffraction patterns and High Resolution TEM images.

MacTempas (1.7.9) by Total Resolution Multislice calculation of TEM diffraction and images. MacTempas is a full Macintosh application. Dynamical calculations of wavefunctions in thin crystal is carried out with defined slices and microscope parameters, and the output in different thickness can be controlled. Images as well as diffraction patterns at different conditions are shown in montage tables. More details: www.totalresolution.com

Gatan DigitalMicrograph (ver. 2.5) and EL/P (ver. 2.1)software (Mac)

DigitalMicrograph™ is Gatan Imaging Filter (GIF) system control software and also provides users to process and analyze images with TEM-oriented functions. For example, to perform Fourier transform (FFT) from either digital images or diffraction patterns, and the diffraction can also be masked with designed patterns. This program can also read images in some popular formats, such as TIFF, PICT, etc. EL/P (v.2.1) is for acquiring and processing electron energy loss spectrum (EELS). In combine with DigitalMicrograph, the program can monitor the CCD-image of the spectra, as well as performing EELS mappings with selected edges of elements. Features of this EL/P include automated edge detection and identification, zero-loss peak tail deconvolution, thickness computation, and quantitative analysis with improved cross-section calculation. Processing spectrum with alignment and filter options, as well as Fourier transform (convolve/deconvolve) are available. Sample spectrum from a variety of compounds are provided. More details: www.gatan.com

"Desktop Microscopy" (Version 2.1) by Virtual Laboratory Features: Crystallographic modeling of crystals, defects and interface; Stereographic Projection; Diffraction, Kikuchi map and CBED Bloch calculation; Dislocation imaging; Monte Carlo for electron diffraction of particles.