Description

The Plasmatherm PECVD used to deposit thin films (Silicon Nitride, Silicon Dioxide, or Amorphous Silicon) from a gas state to a solid state on teh substrate. The chemical reaction takes place after a RF plasma is created between teh top electrode and the heated platen. The platen is heated by an embedded resistance heater witha range of 80-340 degrees Celsius. This system has processes setup for the deposition of Silicon Nitride, Silicon Dioxide and Amorphous Silicon.