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Program Application

LPCVD (Low-pressure Chemical Vapor Deposition)

Instrument types

A furnace used to deposit SiO2, Si3N4 or poly-silicon films onto multiple wafers (up to 2"). The deposition is accomplished at 750o C from silane, ammonia, and dichlorosilane at reduced pressure. The dielectric films are of higher quality than those produced by low-temperature PECVD, at the cost of a higher thermal budget.